Degradation Behavior of High Power Semiconductor Modules by Low-Temperature Sintering Technology

This paper presents a degradation behavior of high-power semiconductor modules, i.e., IGBT, with sintered silver by power cycle test and thermal test. The electrical characteristics, such as on-state voltage drop, resistance leakage current, were studied. For test, the IGBT module still has an acceptable performance after 30 K cycles. No noticeable changes can be found in die-attach layer, while DBC-attach layer begins to fail cycling characteristics only tested within first 300 cycles because Al 2 O 3 DBC substrate failed before failure bonding layers. Finally, finite element methods (FEM) used analyze mechanical stress distribution mechanism